View 5962R9325301SDA_2709238.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

revisions ltr description date (yr-mo-da) approved a changes to table i; added rha data. editorial changes throughout. 94-12-22 m. l. poelking b changes in accordance with nor 5962-r372-97. 97-07-08 monica l. poelking c incorporate revision b. add device type 02. add radiation f eatures for device type 01. add case outline x. add vendor cage number f8859. update boilerplate to mil-prf-38535 requirements. ? ltg 02-07-10 thomas m. hess rev sheet rev c c c c c c c c c c c sheet 15 16 17 18 19 20 21 22 23 24 25 rev status rev c c c c c c c c c c c c c c of sheets sheet 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pmic n/a prepared by thomas j. ricciuti defense supply center columbus standard microcircuit drawing checked by thomas j. ricciuti columbus, ohio 43216 http://www.d scc.dla.mil this drawing is available for use by all departments approved by monica l. poelking microcircuit, digital, advanced cmos, quad buffer with three-state outputs, monolithic silicon and agencies of the department of defense drawing approval date 94-06-06 amsc n/a revision level c size a cage code 67268 5962-93253 sheet 1 of 25 dscc form 2233 apr 97 5962-e269-02 distribution statement a . approved for public releas e; distribution is unlimited.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 2 dscc form 2234 apr 97 1. scope 1.1 scope . this drawing documents two product assurance class leve ls consisting of high reliability (device classes b, q, and m) and space application (device classes s and v). a choice of case outlines and lead finishes are available and are reflected in the part or identifying number (pin). when avail able, a choice of radiation har dness assurance (rha) levels are reflected in the pin. 1.2 pin . the pin is as shown in the following examples. 5962 - 93253 01 m c x federal stock class designator rha designator (see 1.2.1) device type (see 1.2.2) device class designator case outline (see 1.2.4) lead finish (see 1.2.5) \ / (see 1.2.3) \/ drawing number 1.2.1 rha designator . device classes b, s, q, and v rha marked dev ices meet the mil-prf-38535 specified rha levels and are marked with the appropriate rha designator. devi ce class m rha marked devices meet the mil-prf-38535, appendix a specified rha levels and are marked with the appropria te rha designator. a dash (-) indicates a non-rha device. 1.2.2 device type(s) . the device type(s) identify the circuit function as follows: device type generic number circuit function 01 54ac125 quad buffer with three-state outputs 02 54ac125 quad buffer with three-state outputs 1.2.3 device class designator . the device class designator is a single letter identifying the product assurance level as follows: device class device requirements documentation m vendor self-certification to the requirements for mil-std-883 compliant, non- jan class level b microcircuits in accordance with mil-prf-38535, appendix a b, s, q, or v certification and qualification to mil-prf-38535 1.2.4 case outline(s) . the case outline(s) are as designated in mil-std-1835 and as follows: outline letter descriptive designator terminals package style c gdip1-t14 or cdip2-t14 14 dual-in-line d gdfp1-f14 or cdfp2-f14 14 flat pack x cdfp3-f14 14 flat pack 2 cqcc1-n20 20 square leadless chip carrier 1.2.5 lead finish . the lead finish is as specified in mil-prf-38535 for device classes b, s, q, and v or mil-prf-38535, appendix a for device class m.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 3 dscc form 2234 apr 97 1.3 absolute maximum ratings . 1 / 2 / 3 / supply voltage range (v cc ) ................................................................................. -0.5 v dc to +6.0 v dc dc input voltage range (v in ) ............................................................................... -0.5 v dc to v cc +0.5 v dc dc output voltage range (v out ) .......................................................................... -0.5 v dc to v cc +0.5 v dc dc input diode current (i ik ) (v in = -0.5 v to v cc +0.5 v) ..................................... 20 ma dc output diode current (i ok ) (v out = -0.5 v to v cc +0.5 v) ............................... 20 ma dc output current (i out ) ...................................................................................... 50 ma dc v cc or gnd current (i cc , i gnd )....................................................................... 50 ma time the number of outputs storage temperature range (t stg )....................................................................... -65 c to +150 c maximum power dissipation (p d ) ........................................................................ 500 mw lead temperature (solder ing, 10 sec onds) ......................................................... +300 c thermal resistance, junction-to-case ( jc ) .......................................................... see mil-std-1835 junction temperature (t j ).................................................................................... +175 c 1.4 recommended operating conditions . 2 / 3 / 4 / supply voltage range (v cc ) ................................................................................. +3.0 v dc to +5.5 v dc input voltage range (v in ) ..................................................................................... +0.0 v dc to v cc output voltage range (v out )................................................................................ +0.0 v dc to v cc maximum low level input voltage (v il )................................................................. 0.90 v dc at v cc = 3.0 v dc 1.08 v dc at v cc = 3.6 v dc 1.35 v dc at v cc = 4.5 v dc 1.65 v dc at v cc = 5.5 v dc minimum high level input voltage (v ih ) ................................................................ 2.10 v dc at v cc = 3.0 v dc 2.52 v dc at v cc = 3.6 v dc 3.15 v dc at v cc = 4.5 v dc 3.85 v dc at v cc = 5.5 v dc case operating temperature range (t c ) .............................................................. -55 c to +125 c input edge rate ( ? v/ ? t) minimum: (v in from 30% to 70% of v cc ) .......................................................................... 125 mv/ns maximum low level output current (i ol ) ............................................................... 12 ma at v cc = 3.0 v and 3.6 v 24 m a at v cc = 4.5 v and 5.5 v maximum high level output current (i oh ) ............................................................. -12 ma at v cc = 3.0 v and 3.6 v -24 ma at v cc = 4.5 v and 5.5 v 1.5 radiation features . maximum total dose available (dose rate = 50 ? 300 rads (si)/s): device type 01 .................................................................................................. 100 krads (si) single event latch-up (sel)................................................................................ 100 mev-cm 2 /mg 1 / stresses above the absolute maximum rating may cause permanent damage to the device. extended operation at the maximum levels may degrade performance and affect reliab ility. the maximum junction temperature may be exceeded for allowable short duration burn-in screening condi tions in accordance with method 5004 of mil-std-883. 2 / unless otherwise noted, all voltages are referenced to gnd. 3 / the limits for the parameters specified herein shall apply over the full specified v cc range and case temperature range of -55 c to +125 c. 4 / operation from 2.0 v dc to 3.0 v dc is provided for com patibility with data retention and battery back up systems. data retention implies no input transitions and no stored data loss with the following conditions: v ih 70 percent of v cc , v il 30 percent of v cc , v oh 70 percent of v cc at ?20 a, v ol 30 percent of v cc at 20 a.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 4 dscc form 2234 apr 97 2. applicable documents 2.1 government specification, standards, and handbooks . the following specification, standards, and handbooks form a part of this drawing to the extent specified herein. unless ot herwise specified, the issues of these documents are those liste d in the issue of the department of defense i ndex of specifications and standards (dodi ss) and supplement thereto, cited in the solicitation. specification department of defense mil-prf-38535 - integrated circuits, manufacturing, general specification for. standards department of defense mil-std-883 - test method standard microcircuits. mil-std-1835 - interface standard electronic component case outlines. handbooks department of defense mil-hdbk-103 - list of standard microcircuit drawings. mil-hdbk-780 - standard microcircuit drawings. (unless otherwise indicated, copies of the specificat ion, standards, and handbooks are ava ilable from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.2 non-government publications . the following document(s) form a part of this document to the extent specified herein. unless otherwise specified, the issues of the documents which are dod adopted are t hose listed in the issue of the dodiss cited in the solicitation. unless otherwise specified, the issues of documents not lis ted in the dodiss are the issues of the documents cited in the solicitation. electronic industries alliance (eia) jedec standard no. 20 - standardized for description of 54/74ac xxxx and 54/74act xxxx advanced high-s peed cmos devices. jedec standard no. 17 - standardized for description of latch-up in cmos integrated circuits. (applications for copies should be addr essed to the electronics industries a lliance, 2500 wilson blvd, arlington, va 22201-3834). (non-government standards and other publicat ions are normally available from the organizations that prepare or distribute the documents. these documents may also be available in or through libraries or other informational services.) 2.3 order of precedence . in the event of a conflict between the text of th is drawing and the references cited herein, the text of this drawing takes precedence. nothing in this docum ent, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements 3.1 item requirements . the individual item requirements for device cla sses b, s, q, and v shall be in accordance with mil-prf-38535 and as specified herein or as modified in the device manufacturer' s quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. the individual item requirements for device class m shall be in accordance with mil-prf-38535, appendix a for non-jan class level b devices and as specified herein.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 5 dscc form 2234 apr 97 3.2 design, construction, and physical dimensions . the design, construction, and physica l dimensions shall be as specified in mil-prf-38535 and herein for device classes b, s, q, and v or mil-prf-38535, appendix a and herein for device class m. 3.2.1 case outline(s) . the case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 terminal connections . the terminal connections sha ll be as specified on figure 1. 3.2.3 truth table . the truth table shall be as specified on figure 2. 3.2.4 logic diagram . the logic diagram shall be as specified on figure 3. 3.2.5 ground bounce waveforms and test circuit . the ground bounce waveforms and test circuit shall be as specified on figure 4. 3.2.6 switching waveforms and test circuit . the switching waveforms and test circuit shall be as specified on figure 5. 3.2.7 radiation exposure circuit . the radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 electrical performanc e characteristics and postirr adiation parameter limits . unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as s pecified in table i and shall apply over th e full case operating temperature range. test c onditions for these specified characteristics and limits are as specified in table i. 3.4 electrical test requirements . the electrical test requirements shall be the subgroups specified in t able ii. the electrical tests for each subgroup are defined in table i. 3.5 marking . the part shall be marked with the pin listed in 1.2 her ein. in addition, the manufacturer's pin may also be marked as listed in mil-hdbk-103. for pa ckages where marking of the entire smd pi n number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. for rha product using this option, the rha designator shall still be marked. marking for device classe s b, s, q, and v shall be in accordance with mil-prf-38535. marking for device class m shall be in accordance with mil-prf-38535, appendix a. 3.5.1 certification/compliance mark . the certification mark for device classes b, s, q, and v shall be a "qml" or "q" as required in mil-prf-38535. the compliance mark for devic e class m shall be a "c" as required in mil-prf-38535, appendix a. 3.6 certificate of compliance . for device classes b, s, q, and v, a cert ificate of compliance shall be required from a qml-38535 listed manufacturer in order to suppl y to the requirements of this drawing (see 6.6.1 herein). for device class m, a certificate of compliance shall be requi red from a manufacturer in order to be listed as an approved source of supply in mil-hdbk-103 (see 6.6.2 herein). the certif icate of compliance submitted to dscc- va prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes b, s, q, and v, the requirements of mil-prf-38535 and herein or for device class m, the requirements of mil-prf-38535, appendix a and herein. 3.7 certificate of conformance . a certificate of conformance as required fo r device classes b, s, q, and v in mil-prf-38535 or for device class m in mil-prf-38535, appendix a shall be provided with each lot of microcircuits delivered to this drawing. 3.8 notification of change for device class m . for device class m, notification to dscc-va of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in mil-prf-38535, appendix a. 3.9 verification and review for device class m . for device class m, dscc, dscc's agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. offs hore documentation shall be made available onshore at the option of the reviewer. 3.10 microcircuit group assignment for device class m . device class m devices covered by this drawing shall be in microcircuit group number 37 (see mil-prf-38535, appendix a).
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 6 dscc form 2234 apr 97 table i. electrical per formance characteristics . test and mil-std-883 test method 1 / symbol conditions -55 c t c +125 c 2 / 3 / 3.0 v v cc 5.5 v unless otherwise specified device type 4 / and device class v cc group a subgroups limits 5 / unit min max v oh1 6 / all all 3.0 v 1, 2, 3 2.9 v oh2 6 / for all inputs affecting output under test v in = v ih or v il for all other inputs v in = v cc or gnd i oh = -50 a all all 4.5 v 1, 2, 3 4.4 v for all inputs affecting output under test v in = v ih or v il for all other inputs v in = v cc or gnd i oh = -50 a all all 1, 2, 3 5.4 m 5.4 d 5.4 v oh3 7 / 8 / p, l, r 01 b, s, q, v 5.5 v 1 5.4 v v oh4 6 / for all inputs affecting output under test v in = v ih or v il for all other inputs v in = v cc or gnd i oh = -12 ma all all 3.0 v 1, 2, 3 2.4 v for all inputs affecting output under test v in = v ih or v il for all other inputs v in = v cc or gnd i oh = -24 ma all all 1, 2, 3 3.7 m 3.7 d 3.7 v oh5 7 / 8 / p, l, r 01 b, s, q, v 4.5 v 1 3.7 v high level output voltage 3006 v oh6 6 / for all inputs affecting output under test v in = v ih or v il for all other inputs v in = v cc or gnd i oh = -24 ma all all 5.5 v 1, 2, 3 4.7 v see footnotes at end of table.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 7 dscc form 2234 apr 97 table i. electrical per formance characteristics ? continued. test and mil-std-883 test method 1 / symbol conditions -55 c t c +125 c 2 / 3 / 3.0 v v cc 5.5 v unless otherwise specified device type 4 / and device class v cc group a subgroups limits 5 / unit min max for all inputs affecting output under test v in = v ih or v il for all other inputs v in = v cc or gnd i oh = -50 ma all all 1, 2, 3 3.85 m 3.85 d 3.85 high level output voltage 3006 v oh7 7 / 8 / 9 / p, l, r 01 b, s, q, v 5.5 v 1 3.85 v v ol1 6 / all all 3.0 v 1, 2, 3 0.1 v v ol2 6 / for all inputs affecting output under test v in = v ih or v il for all other inputs v in = v cc or gnd i ol = 50 a all all 4.5 v 1, 2, 3 01 v for all inputs affecting output under test v in = v ih or v il for all other inputs v in = v cc or gnd all all 1, 2, 3 0.1 m 0.1 d 0.1 v ol3 7 / 8 / i ol = 50 a p, l, r 01 b, s, q, v 5.5 v 1 0.1 v 1, 3 0.4 all b, s, q, v 2 0.5 for all inputs affecting output under test v in = v ih or v il for all other inputs v in = v cc or gnd i ol = 12 ma 1 0.4 low level output voltage 3007 v ol4 6 / all m 4.5 v 2, 3 0.5 v see footnotes at end of table.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 8 dscc form 2234 apr 97 table i. electrical per formance characteristics ? continued. symbol v cc limits 5 / unit test and mil-std-883 test method 1 / conditions -55 c t c +125 c 2 / 3 / 3.0 v v cc 5.5 v unless otherwise specified device type 4 / and device class group a subgroups min max 1, 3 0.4 all b, s, q, v 2 0.5 for all inputs affecting output under test v in = v ih or v il for all other inputs v in = v cc or gnd v 1 0.4 i ol = 24 ma all m 2, 3 0.5 m 0.4 d 0.4 v ol5 7 / 8 / p, l, r 01 b, s, q, v 4.5 v 1 0.4 1, 3 0.4 v all b, s, q, v 2 0.5 1 0.4 v ol6 6 / for all inputs affecting output under test v in = v ih or v il for all other inputs v in = v cc or gnd i ol = 24 ma all m 5.5 v 2, 3 0.5 for all inputs affecting output under test v in = v ih or v il for all other inputs v in = v cc or gnd i ol = 50 ma all b, s, q, v 1, 2, 3 1.65 m 1.65 d 1.65 low level output voltage 3007 v ol7 7 / 8 / 9 / p, l, r 01 b, s, q, v 5.5 v 1 1.65 for input under test i in = 1 ma v all b, s, q, v 1 0.4 1.5 m 0.4 1.5 d 0.4 1.5 positive input clamp voltage 3022 v ic+ 7 / 8 / p, l, r 01 b, s, q, v gnd 1 0.4 1.5 for input under test i in = -1 ma v all b, s, q, v 1 -0.4 -1.5 m -0.4 -1.5 d -0.4 -1.5 negative input clamp voltage 3022 v ic- 7 / 8 / p, l, r 01 b, s, q, v open 1 -0.4 -1.5 see footnotes at end of table.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 9 dscc form 2234 apr 97 table i. electrical per formance characteristics ? continued. test and mil-std-883 test method 1 / symbol conditions -55 c t c +125 c 2 / 3 / 3.0 v v cc 5.5 v unless otherwise specified device type 4 / and device class v cc group a subgroups limits 5 / unit min max 1 0.1 all b, s, q, v 2 1.0 for input under test v in = v cc for all other inputs v in = v cc or gnd 1 0.1 a all m 2, 3 1.0 m 0.1 d 0.1 input current high 3010 i ih 7 / 8 / p, l, r 01 b, s, q, v 5.5 v 1 0.1 1 -0.1 all b, s, q, v 2 -1.0 for input under test v in = gnd for all other inputs v in = v cc or gnd 1 -0.1 a all m 2, 3 -1.0 m -0.1 d -0.1 input current low 3009 i il 7 / 8 / p, l, r 01 b, s, q, v 5.5 v 1 -0.1 1 0.5 all b, s, q, v 2 10.0 v out = v cc an = v ih for all other inputs v in = v cc or gnd 1 0.5 a all m 2, 3 10.0 m 25.0 d 25.0 three-state output leakage current high 3021 i ozh 7 / 8 / 10 / p, l, r 01 b, s, q, v 5.5 v 1 25.0 1 -0.5 all b, s, q, v 2 -10.0 v out = gnd an = v ih for all other inputs v in = v cc or gnd 1 -0.5 a all m 2, 3 -10.0 m -25.0 d -25.0 three-state output leakage current low 3020 i ozl 7 / 8 / 10 / p, l, r 01 b, s, q, v 5.5 v 1 -25.0 see footnotes at end of table.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 10 dscc form 2234 apr 97 table i. electrical per formance characteristics ? continued. test and mil-std-883 test method 1 / symbol conditions -55 c t c +125 c 2 / 3 / 3.0 v v cc 5.5 v unless otherwise specified device type 4 / and device class v cc group a subgroups limits 5 / unit min max input capacitance 3012 c in all all gnd 4 10.0 pf output capacitance 3012 c out all all 5.5 v 4 15.0 pf power dissipation capacitance c pd 11 / see 4.4.1c t c = +25 all all 5.0 v 4 70.0 pf 1 2.0 all b, s, q, v 2 40.0 1 8.0 outputs open an = gnd for all other inputs v in = v cc or gnd all m 2, 3 160.0 a m 15.0 d 100.0 quiescent supply current, outputs high 3005 i cch 7 / 8 / p, l, r 01 b, s, q, v 5.5 v 1 700.0 1 2.0 all b, s, q, v 2 40.0 outputs open an = gnd for all other inputs v in = v cc or gnd 1 8.0 a all m 2, 3 160.0 m 15.0 d 100.0 quiescent supply current, outputs low 3005 i ccl 7 / 8 / p, l, r 01 b, s, q, v 5.5 v 1 700.0 1 2.0 all b, s, q, v 2 40.0 outputs open an = v cc for all other inputs v in = v cc or gnd 1 8.0 a all m 2, 3 160.0 m 15.0 d 100.0 quiescent supply current, outputs three-state 3005 i ccz 7 / 8 / 10 / p, l, r 01 b, s, q, v 5.5 v 1 700.0 low level ground bounce noise v gbl 12 / v ld = 2.5 v i ol = +24 ma see figure 4 all b, s, q, v 4.5 v 4 1500 mv high level ground bounce noise v gbh 12 / v ld = 2.5 v i oh = -24 ma see figure 4 all b, s, q, v 4.5 v 4 1500 mv see footnotes at end of table.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 11 dscc form 2234 apr 97 table i. electrical per formance characteristics ? continued. test and mil-std-883 test method 1 / symbol conditions -55 c t c +125 c 2 / 3 / 3.0 v v cc 5.5 v unless otherwise specified device type 4 / and device class v cc group a subgroups limits 5 / unit min max latch-up input/ output over- voltage i cc (o/v1) 13 / t w 100 s t cool t w 5 s t r 5 ms 5 s t f 5 ms v test = 6.0 v v ccq = 5.5 v v over = 10.5 v all b, s, q, v 5.5 v 2 200 ma latch-up input/ output positive over-current i cc (o/i1+) 13 / t w 100 s t cool t w 5 s t r 5 ms 5 s t f 5 ms v test = 6.0 v v ccq = 5.5 v i trigger = +120 ma al b, s, q, v 5.5 v 2 200 ma latch-up input/ output negative over-current i cc (o/i1-) 13 / t w 100 s t cool t w 5 s t r 5 ms 5 s t f 5 ms v test = 6.0 v v ccq = 5.5 v i trigger = -120 ma all b, s, q, v 5.5 v 2 200 ma latch-up supply over-voltage i cc (o/v2) 13 / t w 100 s t cool t w 5 s t r 5 ms 5 s t f 5 ms v test = 6.0 v v ccq = 5.5 v v over = 9.0 v all b, s, q, v 5.5 v 2 100 ma for all inputs v in = v ih or v il verify output v out see 4.4.1e all all 7, 8 l h m l h d l h p, l, r 01 b, s, q, v 3.0 v 7 l h for all inputs v in = v ih or v il verify output v out all all 7, 8 l h m l h d l h truth table test, output voltage 3014 7 / 8 / 14 / see 4.4.1e p, l, r 01 b, s, q, v 4.5 v 7 l h see footnotes at end of table.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 12 dscc form 2234 apr 97 table i. electrical per formance characteristics ? continued. test and mil-std-883 test method 1 / symbol conditions -55 c t c +125 c 2 / 3 / 3.0 v v cc 5.5 v unless otherwise specified device type 4 / and device class v cc group a subgroups limits 5 / unit min max 9, 11 1.0 9.0 all b, s, q, v 10 1.0 10.0 9 1.0 9.0 c l = 50 pf minimum r l = 500 ? see figure 5 all m 10, 11 1.0 10.0 m 1.0 9.0 d 1.0 9.0 p, l, r 01 b, s, q, v 3.0 v 9 1.0 9.0 9, 11 1.0 7.0 all b, s, q, v 10 1.0 8.5 9 1.0 7.0 all m 10, 11 1.0 8.5 m 1.0 7.0 d 1.0 7.0 propagation delay time, data to output, bn to on 3003 t phl , t plh 7 / 8 / 15 / 16 / p, l, r 01 b, s, q, v 4.5 v 9 1.0 7.0 ns 9, 11 1.0 10.0 all b, s, q, v 10 1.0 11.0 9, 1.0 10.0 c l = 50 pf minimum r l = 500 ? see figure 5 all m 10, 11 1.0 11.0 m 1.0 10.0 d 1.0 10.0 p, l, r 01 b, s, q, v 3.0 v 9 1.0 10.0 9, 11 1.0 8.0 all b, s, q, v 10 1.0 8.5 9 1.0 8.0 all m 10, 11 1.0 8.5 m 1.0 8.0 d 1.0 8.0 propagation delay time, output enable an to on 3003 t pzh , t pzl 7 / 8 / 15 / 16 / p, l, r 01 b, s, q, v 4.5 v 9 1.0 8.0 ns see footnotes at end of table.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 13 dscc form 2234 apr 97 table i. electrical per formance characteristics ? continued. test and mil-std-883 test method 1 / symbol conditions -55 c t c +125 c 2 / 3 / 3.0 v v cc 5.5 v unless otherwise specified device type 4 / and device class v cc group a subgroups limits 5 / unit min max 9, 11 1.0 10.0 all b, s, q, v 10 1.0 11.0 9, 1.0 10.0 c l = 50 pf minimum r l = 500 ? see figure 5 all m 10, 11 1.0 11.0 m 1.0 10.0 d 1.0 10.0 p, l, r 01 b, s, q, v 3.0 v 9 1.0 10.0 9, 11 1.0 9.0 all b, s, q, v 10 1.0 9.5 9 1.0 9.0 all m 10, 11 1.0 9.5 m 1.0 9.0 d 1.0 9.0 propagation delay time, output disable an to on 3003 t phz , t plz 7 / 8 / 15 / 16 / p, l, r 01 b, s, q, v 4.5 v 9 1.0 9.0 ns 1 / for tests not listed in the referenced mil-std-883 [e.g. i cc (o/v1)], utilize the general test procedure under the conditions listed herein. all inputs and outputs shall be tested as applicable, to the tests in table i herein. 2 / each input/output, as applicable, shall be tested at the specifi ed temperature for the specified limits. output terminals no t designated shall be high level logic, low level logic, or open, except as follows: a. v ic (pos) tests, the gnd terminal can be open. t c = +25 c. b. v ic (neg) tests, the v cc terminal shall be open. t c = +25 c. c. for all i cc tests, the output terminal shall be open. when perform ing these tests, the current meter shall be placed in the circuit such that all current flows through the meter. the values to be used for v ih and v il shall be the v ih minimum and v il maximum values listed in section 1.4 herein. all devices shall meet the limits specifi ed in table i, as applicable, at 3.0 v v cc 3.6 v and 4.5 v v cc 5.5 v. 3 / device type 01 supplied to this smd is tested at all leve ls m, d, p, l, and r of irradiation. pre and post irradiation v alues are identical unless otherwise specified in table i. 4 / the word "all" in the device type and device class column , means non-rha limits for all device types and classes. whereas m, d, p, l, and r in the conditions column are pos tirradiation limits for those device types and classes specified in the device type and device class column.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 14 dscc form 2234 apr 97 table i. electrical per formance characteristics ? continued. 5 / for negative and positive voltage and current values, the sign des ignates the potential difference in reference to gnd and the direction of current flow respectively; and the absolute val ue of the magnitude, not the sign, is relative to the minimum and maximum limits, as applicable, listed herein. 6 / for device classes b, s, q, and v, this test is guarant eed, if not tested, to the limits specified in table i. 7 / rha samples do not have to be tested at -55 c and +125 c postirradiation. 8 / when performing postirradiation electr ical measurements for rha level, t a = +25 c. limits shown are guaranteed at t a = +25 c 5 c. 9 / transmission driving tests are performed at v cc = 5.5 v dc with a 2 ms duration maximum. this test may be performed using v in = v cc or gnd. when v in = v cc or gnd is used, the test is guaranteed for v in = v ih or v il . 10 / three-state output conditions are required. 11 / power dissipation capacitance (c pd ) determines the no load dynamic power consumption, p d = (c pd + c l ) (v cc x v cc )f + (i cc x v cc ). the dynamic current consumption, i s = (c pd + c l ) v cc f + i cc . for both p d and i s : f is the frequency of the input signal. 12 / this test is for qualification only. ground bounce tests are performed on a nonswitching (quiescent) output and are used to measure the magnitude of induced noise caused by other si multaneously switching outputs. the test is performed on a low noise bench test fixture with all outputs fully dc loaded (i ol maximum and i oh maximum = i.e., 24 ma) and 50 pf of load capacitance (see figure 4). the loads must be located as close as possible to the device output. inputs are then conditioned with 1 mhz pulse (t r = t f = 3.5 1.5 ns) switching simultaneously and in phase such that one output is forced low and all others (possible) are switc hed. the low level ground bounce noise is measured at the quiet output using a f.e.t. oscilloscope probe with at least 1 m ? impedance. measurement is taken fr om the peak of the largest positive pulse with respect to the nominal low level output voltage (s ee figure 4). the device inputs are then conditioned such that the output under test is at a high nominal v oh level. the high level ground bounce measurement is t hen measured from nominal v oh level to the largest negative peak. this procedure is repeated such that all outputs are tested at a high and low level with a maximum number of outputs switching. 13 / see jedec std. 17 for electrically induced latch-up test methods and procedures. the values listed for v trigger , i trigger , and v over , are to be accurate within 5 percent. 14 / tests shall be performed in sequence, attributes data only. functional tests shall include the truth table and other logic patterns used for fault detection. the test vectors used to verify the truth table shall, at a minimum, test all functions of each input and output. all possible input to output logic patte rns per function shall be guaranteed, if not tested, to the truth table in figure 2 herein. functional tests shall be performed in sequence as approved by the qualifying activity on qualified devices. for v cc = 4.5 v and 5.5 v, h 2.5 v and l < 2.5 v. for v cc = 3.0 v and 3.6 v, h 1.5 v and l < 1.5 v. alternatively, for any value of v cc , h 0.50v cc and l < 0.50v cc are acceptable. for all device classes, functional tests at v cc = 3.0 v, 3.6 v, and 5.5 v are guaranteed, if not tested. tests at v cc = 3.0 v are required for rha specified devices only (t a = +25 c 5 c).
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 15 dscc form 2234 apr 97 table i. electrical per formance characteristics ? continued. 15 / device classes b, s, q, and v are tested at v cc = 3.0 v and v cc = 4.5 v at t c = +125 c for sample testing and at v cc = 3.0 v and v cc = 4.5 v at t c = +25 c for screening. other voltages of v cc and temperatures are guaranteed, if not tested, see 4.4.1d. 16 / ac limits at v cc = 5.5 v are equal to the limits at v cc = 4.5 v and guaranteed by testing at v cc = 4.5 v. ac limits at v cc = 3.6 v are equal to the limits at v cc = 3.0 v and guaranteed by testing at v cc = 3.0 v. minimum ac limits for v cc = 5.5 v and v cc = 3.6 v are 1.0 ns. the minimum ac limits at v cc = 3.0 v, 3.6 v, and 5.5 v are guaranteed by guardbanding the v cc = 4.5 v minimum limits to 1.5 ns. for propagat ion delay tests, all paths must be tested. device types 01 and 02 case outlines c, d, x 2 terminal number terminal symbol 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 a0 b0 o0 a1 b1 o1 gnd o3 b3 a3 o2 b2 a2 v cc ---- ---- ---- ---- ---- ---- nc a0 b0 o0 nc a1 nc b1 o1 gnd nc o3 b3 a3 nc o2 nc b2 a2 v cc nc = no connection pin description terminal symbol description an (n = 0 to 3) output enable control inputs bn (n = 0 to 3) data inputs on (n = 0 to 3) three-state outputs figure 1. terminal connections .
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 16 dscc form 2234 apr 97 inputs outputs an bn on l l h l h x l h z h = high voltage level l = low voltage level x = irrelevant z = high impedance figure 2. truth table . figure 3. logic diagram .
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 17 dscc form 2234 apr 97 note: resistor and capacitor tolerance = 10% figure 4. ground bounce waveforms and test circuit .
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 18 dscc form 2234 apr 97 notes: 1. when measuring t plz and t pzl : v test = 2 x v cc . 2. when measuring t phz , t pzh , t plh and t phl : v test = open. 3. c l = 50 pf minimum or equivalent (includes test jig and probe capacitance). 4. r l = 500 ? or equivalent. 5. r t = 50 ? or equivalent. 6. input signal from pulse generator: v in = 0.0 v to v cc ; prr 10 mhz; t r 2.5 ns; t f 2.5 ns; t r and t f shall be measured from 10% of v cc to 90% of v cc , and 90% of v cc to 10% of v cc , respectively; duty cycle = 50%. 7. timing parameters shall be tested at a minimum input frequency of 1 mhz. 8. the outputs are measured one at a ti me with one transition per measurement. figure 5. switching waveforms and test circuit .
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 19 dscc form 2234 apr 97 4. quality assurance provisions 4.1 sampling and inspection . for device classes b, s, q, and v, sampling and inspection procedures shall be in accordance with mil-prf-38535 or as modified in the device m anufacturer's quality management (qm) plan. the modification in the qm plan shall not affect the form, fit, or function as described herein. for device class m, sampling and inspection procedures shall be in accordance with mil-prf-38535, appendix a. 4.2 screening . for device classes b, s, q, and v, screening shall be in accordance with mil-prf-38535, and shall be conducted on all devices prior to qualification and technology c onformance inspection. for device class m, screening shall be in accordance with method 5004 of mil-std-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 additional criteria for device classes m, b, and s . a. burn-in test, method 1015 of mil-std-883. (1) test condition a, b, c, or d. the test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. the test circuit shall specify the inputs, outputs, biases, and pow er dissipation, as applicable, in acco rdance with the intent specified in test method 1015 of mil-std-883. (2) t a = +125 c, minimum. (3) delete the sequence specified in 3.1.10 through 3. 1.14 of method 5004 and substitute the first 7 test requirements of table ii herein. (4) for device class m, unless otherwise specified, the requirements for device class b in method 1015 of mil-std-883 shall be followed. (5) static burn-in, device classes b and s, test conditi on a, test method 1015 of mil-std-883 (unless otherwise specified in the qm plan). test duration for each static test shall be 24 hours minimum for class s devices and in accordance with table i of method 1015 for class b devices. (a) for static burn-in i, all inputs shall be connect ed to gnd. outputs may be open or connected to v cc /2 0.5 v. resistors r1 are optional on bot h inputs and open outputs, and required on outputs connected to v cc /2 0.5 v. r1 = 220 ? to 47 k ? . (b) for static burn-in ii, all inputs s hall be connected through the r1 resistors to v cc . outputs may be open or connected to v cc /2 0.5 v. resistors r1 are optional on open outputs, and required on outputs connected to v cc /2 0.5 v. r1 = 220 ? to 47 k ? . (c) v cc = 5.5 v +0.5 v, -0.00 v. (6) dynamic burn-in, device classes b and s, test c ondition d, method 1015 of mil-std-883 (unless otherwise specified in the qm plan). (a) input resistors = 220 ? to 2 k ? 20 percent. (b) output resistors = 220 ? 20 percent. (c) v cc = 5.5 v +0.5 v, -0.00 v.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 20 dscc form 2234 apr 97 (d) each bn input shall be connected through the resist ors in parallel to a common clock pulse (cp). each an input shall be connected through a resistor to gnd. each output shall be connected through resi stor to v cc /2 0.5 v. (e) cp = 25 khz to 1 mhz square wave; duty cycle = 50 percent 15 percent; v ih = 4.5 v to v cc , v il = 0 v 0.5 v; t r , t f 100 ns. b. interim and final electrical test paramet ers shall be as specified in table ii herein. c. for class s devices, post dynamic burn-in, or class b devices, post static burn-in, elec trical parameter measurements may, at the manufacturer's option, be performed separately or included in the final electric al parameter requirements. 4.2.2 additional criteria for device classes b, s, q, and v . a. the burn-in test duration, test condi tion and test temperature, or approved alte rnatives shall be as specified in the device manufacturer's qm plan in accordance with mil-prf- 38535. the burn-in test circuit shall be maintained under document revision level control of the device manufacturer' s technology review board (trb) in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of mil-std-883. b. interim and final electrical test parameter s shall be as specified in table ii herein. c. additional screening for device class s or v beyond the require ments of device class b or q shall be as specified in mil-prf-38535, appendix b. 4.2.3 percent defective allowable (pda) . a. the pda for class s or v devices shall be 5 percent for static burn-in and 5 percent for dynamic burn-in, based on the exact number of devices subm itted to each separate burn-in. b. static burn-in i and ii failures shall be cumulative for determining the pda. c. the pda for class b or q devices shall be in accordanc e with mil-prf-38535 for static burn-in. dynamic burn-in is not required. d. the pda for class m devices shall be in accordanc e with mil-prf-38535, appendix a for static burn-in and dynamic burn-in. e. those devices whose measured char acteristics, after burn-in, exceed the specified delta limits or electrical parameter limits specified in table i, subgroup 1, are defective and shall be removed from the lot. the verified number of failed devices times 100 divided by the total number of devices in the lot initially submitted to burn-in shall be used to determine the percent defective for the lo t and the lot shall be accepted or rejected based on the specified pda.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 21 dscc form 2234 apr 97 4.3 qualification inspection . 4.3.1 qualification inspection for device classes b, s, q, and v . qualification inspection for device classes b, s, q, and v shall be in accordance with mil-prf-38535. inspections to be performed shall be those specified in mil-prf-38535 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.5). 4.4 conformance inspection . technology conformance inspection for classes b, s, q, and v shall be in accordance with mil-prf-38535 including groups a, b, c, d, and e inspections and as specified. quality conf ormance inspection for device class m shall be in accordance with mil-prf-38535, appendix a and as specified herein. ins pections to be performed for device class m shall be those specified in method 5005 of mil- std-883 and herein for groups a, b, c, d, and e inspections (see 4.4.1 through 4.4.5). table ii. electrical test requirements . test requirements, mil-std-883 test method subgroups 1 / (in accordance with mil-std-883, method 5005, table i) subgroups 1 / (in accordance with mil-prf-38535, table iii) device class m device 2 / class b device 2 / class s device class q device class v interim electrical parameters, method 5004 1 1 1 1 static burn-in i, method 1015 (see 4.2.1a) 3 / not required required 4 / not required required 4 / interim electrical parameters, method 5004 (see 4.2.1b) 1 5 / 1 5 / static burn-in ii, method 1015 (see 4.2.1a) 3 / required 6 / required 4 / required 6 / required 4 / interim electrical parameters, method 5004 (see 4.2.1b) 1 2 / 5 / 1 2 / 5 / 1 2 / 5 / 1 2 / 5 / dynamic burn-in i, method 1015 (see4.2.1a) 3 / not required required 4 / not required required 4 / interim electrical parameters, method 5004 (see 4.2.1b) 1 5 / 1 5 / final electrical parameters, method 5004 (see 4.2) 2 / 1, 2, 3, 7, 8, 9 2 / 6 / 1, 2, 7, 9 2 / 1, 2, 7, 9 2 / 6 / 1, 2, 3, 7, 8, 9, 10, 11 2 / 1, 2, 3, 7, 8, 9, 10, 11 group a test requirements, method 5005 (see 4.4) 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 1, 2, 3, 4, 7, 8, 9, 10, 11 group b end-point electrical parameters, method 5005 (see 4.4) 5 / 1, 2, 3, 7, 8, 9, 10, 11 group c end-point electrical parameters, method 5005 (see 4.4) 1, 2, 3 5 / 1, 2, 3 5 / 1, 2, 3 5 / 1, 2, 3, 7, 8, 9, 10, 11 group d end-point electrical parameters, method 5005 (see 4.4) 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 group e end-point electrical parameters, method 5005 (see 4.4) 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9 see footnotes on next page.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 22 dscc form 2234 apr 97 table ii. electrical test requirements - continued. 1 / blank spaces indicate tests are not applicable. 2 / pda applies to subgroup 1 (see 4.2.3). for device cla sses s and v, pda applies to subgroups 1 and 7 (see 4.2.3). 3 / the burn-in shall meet the requirements of 4.2.1a herein. 4 / on all class s lots, the device manufacturer shall mainta in read-and-record data (as a minimum on disk) for burn-in electrical parameters (group a, subgr oup 1), in accordance with test met hod 5004 of mil-std-883. for preburn-in and interim electrical parameters the read-and-record requirements are for delta measurements only. 5 / delta limits shall be required only on table i, subgroup 1. t he delta values shall be computed with reference to the previous interim electrical parameters. the delta limits are specified in table iii. 6 / the device manufacturer may at his option either co mplete subgroup 1 electrical parameter measurements, including delta measurements, within 96 hours after burn- in completion (removal of bias; or may complete subgroup 1 electrical measurements wit hout delta measurements within 24 hours after burn-in completion (removal of bias). when the manufacturer elec ts to perform the subgroup 1 electrical parameter measurements without delta measurements, there is no requirement to perform the pre-burn-in electrical test s (first interim el ectrical parameters test in table ii). 4.4.1 group a inspection . a. tests shall be as specified in table ii herein. b. latch-up and ground bounce tests are requi red for device classes b, s, q, and v. these tests shall be performed only for initial qualification and after process or design changes which may affect the performance of the device. latch-up tests shall be considered destructive. for la tch-up and ground bounce tests, test all applicable pins on five devices with zero failures. c. c in , c out , and c pd shall be measured only for initial qualificati on and after process or design changes which may affect capacitance. c in and c out shall be measured between the designated terminal and gnd at a frequency of 1mhz. c pd shall be tested in accordance with the latest revi sion of jedec standard no. 20 and table i herein. for c in , c out , and c pd , test all applicable pins on five devices with zero failures. d. for device classes b, s, q, and v, subgroups 9 and 11 tests shall be measured only for initial qualification and after process or design changes which ma y affect dynamic performance. e. for device class m, subgroups 7 and 8 tests shall be suffici ent to verify the truth table on figure 2 herein. the test vectors used to verify the truth table shall test all possible input to output logic patterns. for device classes b, s, q, and v, subgroups 7 and 8 shall include verifying the functionality of the device. 4.4.2 group b inspection . when applicable, the group b inspection end-point el ectrical parameters shall be as specified in table ii herein. for device class s steady-state life tests, t he test shall be maintained by the manufacturer and shall be mad e available to the acquiring or preparing activity upon request.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 23 dscc form 2234 apr 97 4.4.3 group c inspection . the group c inspection end-point electrical param eters shall be as specified in table ii herein. 4.4.3.1 additional criteria for device class m . steady-state life test conditions, method 1005 of mil-std-883: a. test condition a, b, c, or d. the test circuit s hall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acqui ring activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of mil-std-883. b. t a = +125 c, minimum. c. test duration: 1,000 hours, except as permitted by method 1005 of mil-std-883. 4.4.3.2 additional criteria for device classes b, s, q, and v . the steady-state life test duration, test condition and test temperature, or approved alternatives s hall be as specified in the device manufac turer's qm plan in accordance with mil-prf-38535. the test circuit shall be maintained under docum ent revision level control by the device manufacturer's trb in accordance with mil-prf-38535 and shall be made available to the acquiring or preparing activity upon request. the test circuit shall specify the inputs, outputs, biases, and power dissi pation, as applicable, in accordance with the intent specifie d in test method 1005 of mil-std-883. 4.4.4 group d inspection . the group d inspection end-point electrical param eters shall be as specified in table ii herein. 4.4.5 group e inspection . group e inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. end-point electrical parameters shall be as specified in table ii herein. b. for device classes b, s, q, and v, the devices or test vehicle shall be subjected to r adiation hardness assured tests as specified in mil-prf-38535 for the rha level being tested. for device class m, the devices shall be subjected to radiation hardness assured tests as specified in mil- prf-38535, appendix a for the rha level being tested. all device classes must meet the postirradiation end-point el ectrical parameter limits as defined in table i at t a = +25 c 5 c, after exposure, to the subgroups specified in table ii herein. c. when specified in the purchase order or contract, a copy of the rha delta limits shall be supplied. d. rha tests for device classes m, b, s, q, and v for leve ls m, d, p, l, and r shall be performed through each level to determine at what levels the devices meet the rha requi rements. these rha tests shall be performed for initial qualification and after design or process changes whic h may affect the rha performance of the device. e. prior to irradiation, each selected sample shall be asse mbled in its qualified package. it shall pass the specified group a electrical parameters in table i for subgroups specified in table ii herein.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 24 dscc form 2234 apr 97 table iii. burn-in and operating life test delta parameters (+25 c) . parameter 1 / symbol device types delta limits 01 100 na 2 / supply current i cch , i ccl , i ccz 02 300 na input current low level i il 02 20 na input current high level i ih 02 20 na output voltage low level v cc = 5.5 v i ol = 24 ma v ol 02 0.04 v output voltage high level v cc = 5.5 v i oh = -24 ma v oh 02 0.20 v 1 / these parameters shall be recorded bef ore and after the required burn-in and life test to determine delta limits. 2 / guaranteed, if not tested. 4.4.5.1 total dose irradiation testing . total dose irradiation testing shall be performed in accordance with mil-std-883, method 1019, and as specified herein. prior to and during tota l dose irradiation characterization and testing, the devices for characterization shall be biased so that 50 percent are at inputs high and 50 percent are at inputs low, and the devices fo r testing shall be biased to the worst case condition established during characterization. devices shall be biased as follows: a. inputs tested high, v cc = 5.5 v dc 5%, r cc = 10 ? 20%, v in = 5.0 v dc +5%, r in = 1 k ? 20%, and all outputs are open. b. inputs tested low, v cc = 5.5 v dc 5%, r cc = 10 ? 20%, v in = 0.0 v dc, r in = 1 k ? 20%, and all outputs are open. 4.4.5.1.1 accelerated aging test . accelerated aging shall be performed on classes m, b, s, q, and v devices requiring an rha level greater than 5k rads (si). t he post-anneal end point electrical parameter lim its shall be as specified in table i he rein and shall be the preirradiation end point electrical parameter limit at 25 c 5 c. testing shall be performed at initial qualification and after any design or process changes wh ich may affect the rha response of the device. 4.5 methods of inspection . methods of inspection s hall be specified as follows: 4.5.1 voltage and current . unless otherwise specified, all voltages gi ven are referenced to the microcircuit gnd terminal. currents given are conventional current and positive when flowing into the referenced terminal. 5. packaging 5.1 packaging requirements . the requirements for packaging shall be in accordance with mil-prf-38535 for device classes b, s, q, and v or mil-prf-38535, appendix a for device class m. 6. notes 6.1 intended use . microcircuits conforming to this drawing are intended for use for gove rnment microcircuit applications (original equipment), design applic ations, and logistics purposes. 6.1.1 replaceability . microcircuits covered by this drawing will repl ace the same generic device covered by a contractor- prepared specification or drawing. 6.1.2 substitutability . device classes b and q devices will replace device class m devices. 6.2 configuration control of smd's . all proposed changes to existing smd's will be coordinated with the users of record for the individual documents. this coordination will be accomplished using dd form 1692, engineering change proposal. 6.3 record of users . military and industrial users should inform de fense supply center columbus when a system application requires configuration control and which smd's are applic able to that system. dscc will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. users of drawings covering microelectronic devices (fsc 5962) shoul d contact dscc-va, telephone (614) 692-0544.
standard microcircuit drawing size a 5962-93253 defense supply center columbus columbus, ohio 43216-5000 revision level c sheet 25 dscc form 2234 apr 97 6.4 comments . comments on this drawing should be directed to dscc-va, columbus, ohio 43216-5000, or telephone (614) 692-0547. 6.5 abbreviations, symbols, and definitions . the abbreviations, symbols, and definitions used herein are defined in mil-prf-38535 and mil-hdbk-1331. 6.6 sources of supply . 6.6.1 sources of supply for device classes b, s, q, and v . sources of supply for device classes b, s, q, and v are listed in qml-38535. the vendors listed in qml-38535 have submitted a ce rtificate of compliance (see 3.6 herein) to dscc-va and have agreed to this drawing. 6.6.2 approved sources of supply for device class m . approved sources of supply for cl ass m are listed in mil-hdbk-103. the vendors listed in mil-hdbk-103 have agreed to this drawi ng and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by dscc-va.
standard microcircuit drawing bulletin date: 02-07-10 approved sources of supply for smd 5962-93253 are listed below for immediate acquisition information only and shall be added to mil-hdbk-103 and qml-38535 during the next revision. mil-hdbk-103 and qml-38535 will be revised to include the addition or deletion of sources. the vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accept ed by dscc-va. this bulletin is superseded by the next dated revision of mil-hdbk-103 and qml-38535. standard microcircuit drawing pin 1 / vendor cage number vendor similar pin 2 / 5962-9325301b2a 27014 jm54ac125b2a 5962-9325301bca 27014 jm54ac125bca 5962-9325301bda 27014 jm54ac125bda 5962-9325301s2a 3 / jm54ac125s2a 5962-9325301sca 3 / jm54ac125sca 5962-9325301sda 3 / jm54ac125sda 5962r9325301b2a 27014 jm54ac125b2a-rh 5962r9325301bca 27014 jm54ac125bca-rh 5962r9325301bda 27014 jm54ac125bda-rh 5962r9325301s2a 27014 jm54ac125s2a-rh 5962r9325301sca 27014 jm54ac125sca-rh 5962R9325301SDA 27014 jm54ac125sda-rh 5962-9325302qxa f8859 54ac125k02q 5962-9325302qxc f8859 54ac125k01q 5962-9325302vxa f8859 54ac125k02v 5962-9325302vxc f8859 54ac125k01v see footnotes on next sheet. 1 of 2
standard microcircuit drawing bulletin - continued 1 / the lead finish shown for each pin representing a hermetic package is the most readily available from the manufacturer listed for that part. if the desired lead finish is not listed contact the vendor to determine its availability. 2 / caution . do not use this number for item acquisition. items acquired to this number may not satisfy the performance requirements of this drawing. 3 / no longer available from an approved source of supply. vendor cage vendor name number and address 27014 national semiconductor 2900 semiconductor drive p. o. box 58090 santa clara, ca 95052-8090 f8859 stmicroelectronics 3 rue de suisse bp4199 35041 rennes cedex2-france the information contained herein is disseminated for convenience only and the government assumes no liability whatsoever for any inaccuracies in the information bulletin. 2 of 2

▲Up To Search▲

Price & Availability of 5962R9325301SDA

	To Download 5962R9325301SDA Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .